The epitaxy experiments are arranged to take advantage of the mathematical method of orthogonal process design.
采用“正交设计”的数学方法安排外延试验，找到多层连续均匀生长的条件。
The results indicate that the low temperature epitaxy process is an acceptable method for the preparation of device quality GaAs layers.
结果表明，低温外延是制备较高质量外延层的一种可取方法。
Described is a method of purifying a quartz processing vessel used in the production of semiconductors and more particularly for epitaxy from the gaseous phase.
描述的是一个净化石英加工船用于外延在半导体生产和更特别是从气相方法。
应用推荐