The annealing at the proper temperature may decrease the resistivity of SOI substrate obviously and also improve the resistivity of epitaxial transitional layer partly.
SOI衬底顶层硅呈现高阻状态，合适温度的退火可以明显降低SOI衬底顶层硅电阻率，也可部分减少外延高阻过渡层厚度。
The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well.
第一外延层被布置在衬底之上并且被掺杂为也具有第一导电类型。
Based on actual measurement results, the influence of process quality of semiconductor substrate wafers on epitaxial growth is described.
本文根据实际测量结果，一叙述了半导体衬底制片质量对外延生长的影响。
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