Experimental results reveal that the peak value of the output voltage of POSFET increases with extended gate area and decreases as the channel length increases.
实验结果显示，POSFET传感器的输出峰值随扩展栅面积的增加而增大，随沟道长度的减小而增大。
The drain current model is simplified by an average capacitance formula and a simple expression of channel average mobility with gate voltage.
采用一个随栅压变化的平均电容公式，并用一个简单的解析表达式来描述沟道平均迁移率随栅压的变化关系。
Some numerical results of the gate voltage, potential distribution, carriers and electrical field distribution in the channel et. al. were obtained.
得到了作用机制转变时的栅压、势分布以及载流子和电场分布等的数值计算结果。
应用推荐