欢迎访问《半导体学报》网站！ 关键词: 最大衬底电流应力 关态 带带遂穿 陷阱电荷 GIDL[gap=712]Keywords: I sub max stress;off-state;band-band tunneling;trapping charge;GIDL
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Charge Trapping 电荷捕捉 ; 电荷捕获效应 ; 成电荷陷入
charge-carrier trapping 载流子捕获
Charge Trapping Memory 电荷俘获型存储器 ; 电荷俘获存储器
charge trapping effect 电荷俘获效应
An array of charge trapping nonvolatile memory cells is arranged in several columns of cells, each arranged in a series, such as a NAND string.
一种电荷陷获非易失存储器单元的阵列，排列为多列单元，且每一列为串联安排，如NAND串。
Thus, the relationships of oxide charge generation, including electron trapping and hole trapping effects, with different stress voltages and channel lengths are analyzed.
然后对不同应力电压、不同沟道长度下氧化层陷阱电荷（包括空穴和电子陷阱俘获）的产生做了进一步的分析。
According to the mechanism of current transport, we suggest a breakdown model in which charge accumulation, trapping density and position of its center of gravity are all considered.
根据电流传输机构，本文提出一种考虑了电荷积累、陷阱密度及其重心位置的击穿模型。
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