With taking advantage of the model of two-stage H+ process of interface trap formation and the role that F play in radiation hardness in gate-oxide . the above-mentioned result is deeply analyzed.
借助界面态建立的H~+两步模型和F在栅氧化层中对抗辐照加固所起的作用对上述结果进行了深入的分析。
The experiments were made possible by a novel, one-layer ion trap cooled to minus 269 C (minus 452 F) with a liquid helium bath.
实验利用了一种单层离子势阱，并将其浸在液氦浴中冷却到零下269摄氏度。
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