total dose radiation effect 总剂量辐射效应
total dose radiation effects 总剂量辐照效应
total dose radiation hardness 抗总剂量辐照
total dose radiation hardening 总剂量加固
effects of total dose radiation 总剂量辐射效应
total ionizing dose radiation 电离总剂量辐照
total radiation dose 总辐射剂量
By comparing the MOS structure's responses to hot-carrier injection and total dose radiation, the correlation between them is investigated.
通过对MOS电容进行热载子注入和总剂量辐照实验，探讨了MOS结构热载子注入与总剂量辐射响应的相关性。
The characteristics of the total dose radiation responses of CMOS amplifiers with normal and F-implanted process were studied and compared.
本文研究了注氟（F）与未注F两种不同工艺CMOS运算放大器电路的电离辐照响应特性及变化规律。
The decrease of the gate oxide, the differences of field oxides processing and the selection of the substrate materials will all affect the total dose radiation effects of MOS devices.
器件栅氧厚度的减小、场氧工艺的改变以及衬底材料的不同等都将导致MOS器件的总剂量辐射效应发生改变。
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