1．4 SOl的总剂量效应（TID） 总剂量效应（Total Dose Effect）指的是长期辐照过程中多次粒子入射造成的半 导体材料中电荷累积引起器件的失效。总剂量效应主要影响的是氧化层和界面区
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Radiation effects in si ICs, such as total dose effect, single event effect, et al., can be utilized to measure space radiation environment.
空间辐射环境能够引起半导体集成电路发生的总剂量效应、单粒子效应等辐射效应，可以被用来进行空间辐射环境监测。
A pulsed total dose effect in-circuit test system based on PCI card virtual instrument was developed. Working principle and technical specifications were introduced in detail.
建立了基于PCI插卡式虚拟仪器的脉冲总剂量效应在线测试系统，详细说明了其工作原理和技术指标。
Total-dose irradiation effect of partially-depleted NMOS transistors with gate-all-around and H-gate structures fabricated on modified SIMOX was studied.
研究了在改性注氧隔离（SIMOX）材料上制备的具有环栅和H型栅结构的部分耗尽NMOS晶体管在三种不同偏置状态的总剂量辐照效应。
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