The 2048-element CCPD to be butted USES three-phase three-level polysilicon overlapping gate buried channel structure.
用于拼接的2048位CCPD是采用埋沟三相三层多晶硅交迭栅埋沟结构。
The device utilizes three phase construction with the technology of buried channel and three layer polysilicon.
该器件为三相结构，采用埋沟和三层多晶硅技术。
A 4096 element linear CCPD image device has been successfully designed and fabricated with double-linear three phase buried-channel construction.
采用双线型三相埋沟结构，设计并研制成功4096位线阵CCPD摄像器件。
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