In multilayer interconnected substrate dielectric constant of the substrate materials immediately affects transfer velocity of signal in the device.
在多层互连基板中,基板材料的介电常数直接影响器件信号的传输速度。
The decrease of the gate oxide, the differences of field oxides processing and the selection of the substrate materials will all affect the total dose radiation effects of MOS devices.
器件栅氧厚度的减小、场氧工艺的改变以及衬底材料的不同等都将导致MOS器件的总剂量辐射效应发生改变。
Researchers are building the surfaces out of metallic materials on a substrate.
研究人员塑造出衬底上金属材料的外表面。
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