As the demand increasing steadily for small volume, high density and high heat-dissipation rate IC, the key parameter of wire bonding — pad pitch has to shrink in accordance.
由于市场对小体积、高集成度和高散热率芯片的需求量与日俱增，引线键合工艺的关键参数——焊盘间距也不断缩小以满足市场要求。
It is deduced from the bonding parameter topological index he that a quantitative relationship must be existed between he and the thermal decomposition temperature of some sulfates.
从键参数拓扑指数一般形式出发，导出计算硫酸盐键参数拓扑指数公式，用于关联硫酸盐热分解温度的计算，结果满。
The bonding strength is ensured by the correct choice of substrate material, surface preparation, adhesive and process parameter.
粘合强度可以通过选择正确的基体材料、表面处理、胶粘剂和工艺参数得以保证。
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