The gate is disposed on the substrate and straddled the fin structure.
栅极设置于基底衬底上，横跨鳍状结构。
The charge trapping structure is disposed between the gate and the fin structure.
电荷陷入结构设置于栅极与鳍状结构之间。
The doped region is located in a top of the fin structure and near a surface of the top of the fin structure and the doped region has a first conductive type.
掺杂区位于鳍状结构的一顶部且接近鳍状结构的顶部的一表面，其中掺杂区具有一第一导电型。
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