Coplanar transmission lines and integrated inductors are fabricated on different SOI substrates with standard CMOS processes. The attenuation mechanism of the CPW and inductor is analyzed.
采用标准CMOS工艺在不同soi衬底上制备了微带和微带集成电感器件，分析了CPW和集成电感的损耗机制。
And the attenuation studies of seismic wave in the laboratory have provided studying base for the mechanism studies.
而实验室中对地震波衰减的研究为衰减机理提供了研究基础。
Based on soil water infiltration testing and related parameters measured in field, tillage soil water infiltration capacity attenuation process was analyzed and the mechanism was discussed.
基于大田土壤水分入渗试验与相关参数的测定，分析了耕作土壤入渗能力衰减过程，探讨了耕作土壤入渗能力衰减机理。
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