substrate negative bias voltage 基片负偏压
the substrate s negative bias 基板负偏压
negative substrate bias 衬底负偏压
Ions sputtering could lead to the decrease of the thickness when the substrate negative bias voltage increases excessively.
负偏压过大对吸附离子产生反溅射作用导致涂层厚度减小。
However, when the substrate negative bias is more than 200 v, the surface roughness of the films is increased because of the increased graphite phase in the films.
当负偏压超过200 V后，由于薄膜中石墨相增多，薄膜表面粗糙度将增大。
Tetrahedral amorphous carbon (ta-C) films have been deposited on P-type (100) polished c-silicon wafer with different substrate negative bias by filtered cathodic vacuum arc technology.
采用过滤阴极真空电弧技术并施加一定的衬底负偏压，在P（100）单晶硅片上制备出四面体非晶碳薄膜。
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