The novel design of the Flexfet transistor brings many benefits not realized in standard CMOS processes, which enable sub-volt designs and supports continued voltage scaling.
该Flexfet晶体管设计新颖，可以改善标准CMOS工艺中的分伏设计和电压调节等。
A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector, completely compatible with standard CMOS processes, is designed and implemented in 0.
设计了一种与标准CMOS工艺完全兼容的高速光电探测器和宽带光电集成接收机，并采用0。
Coplanar transmission lines and integrated inductors are fabricated on different SOI substrates with standard CMOS processes. The attenuation mechanism of the CPW and inductor is analyzed.
采用标准CMOS工艺在不同soi衬底上制备了微带和微带集成电感器件，分析了CPW和集成电感的损耗机制。
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