The invention relates to a device for improving utilization rate of a high vacuum ion beam sputtering target material.
本发明涉及一种高真空离子束溅镀靶材利用率增强装置。
A method to predict the sputtering efficiency of a target is also described as well as a system for quantifying the texture homogeneity of a polycrystalline material.
还公开了一种用于预测一种目标的溅射效率的方法以及一种用于量化多晶物质的结构均匀性的系统。
This revolving target improved on the usage of target material and uniformity of film thickness comparing with conventional cylindric magnetron sputtering target.
与常规的圆柱形磁控溅射靶相比较，该旋转式靶提高了靶材利用率和膜厚均匀度。
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