In Chapter 4, perpendicular spin-transfer torque effect on the magnetization switching was investigated in magnetic tunnel junctions (MTJs).

第四章，我们研究了磁性隧道结中垂直自旋转移矩效应诱导的磁化翻转特性。

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Firstly, in the concept of spin torque transfer MRAM, we can manipulate the damping constant and saturation magnetization of CoFeB by simply adjusting the capping layers.

首先，在利用自旋极化电流来驱动之磁性记忆体的研究中，发现藉由改变自 由层钴铁硼的覆盖层可以用来调变它的饱和磁化量以及自旋阻尼系数。

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TOKYO-Toshiba Corporation (TOKYO: 6502) today announced that the company has developed a prototype memory element for a spin transfer torque magnetoresistive random access memory (STT-MRAM) that achieves the world's lowest1 power consumption yet reported, indicating that it has the potential to surpass the power consumption efficiency of SRAM as cache memory.

ENGADGET: Toshiba goes perpendicular to solve MRAM's power issues, rethink cache memory

Grandis makes a non-NAND flash solid state storage technology called spin-transfer torque RAM (STT-RAM) that stores information via the direction of magnetization in a spin-polarized electron current.

FORBES: The Enormous Flash: New Opportunities and Announcements for Solid State Storage

If you're a frequent reader you're surely well aware of the potential of spin torque transfer memory, or STT-MRAM, and how spin-polarized magnetic currents (and the electrons they love to caress) might hold the potential to revolutionize storage as we know it.

ENGADGET: IBM's prototype STT MRAM device spins your bits right round, baby, right round