The effects of magnetic field and bias voltage on spin polarized electron transport through a dual magnetic barriers quantum structure are investigated in this paper.
研究了双磁垒量子结构中，磁场强度和偏压大小对电子自旋极化输运的影响。
In the structure of 1, CuI ion site between the two CuII ions, which blocks the magnetic coupling of the spin center, so the compound show very weak antiferromagnetic behaviors.
在配合物1中，结构中存在一价铜，并且这个一价铜嵌在所有的二价铜之间，这就阻碍了顺磁离子之间的磁耦合，所以这个配合物呈现出非常弱的反铁磁耦合。
The results show that: (i) the spin-polarization of electron can not be produced in the anti-parallel magnetic barriers structure at zero bias voltage;
结果表明：零偏压下，电子在反平行等强磁垒结构中输运不会产生自旋极化；
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