Typical chemical mechanical polishing (CMP) of copper layers on semiconductor devices involves using a hard pad in the first step and a soft pad for the barrier layer removal step.

半导体器件上铜层化学机械抛光(CMP)的第一道工序一般需要使用一块硬抛光垫，在磨去阻挡层的工序中要用到软垫。

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The polishing pad can be used for polishing and processing various thin workpieces, is particularly suitable for thermal sensitivity materials, soft material, crystal materials, and the like.

该抛光垫可用于抛光加工各种薄形工件，尤其适于加工热敏性材料、软材料、晶体材料等。

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