A mathematical model of the I-V characteristics of single-electron transistors (SET's) is improved based on the orthodox single-electron theory.
基于正统单电子理论，提出了单电子晶体管的I - V特性数学算法改进模型。
Based on the section characteristics of single Angle members and eccentrically connecting property, an analytical model is established considering the effect of boundary condition weakening.
模型中考虑了角钢截面特点以及偏心连接的特性，并用端部弹簧来模拟几何位移造成的边界条件弱化的影响。
According to the semi classical model, the transfer characteristics of CMOS type single electron digital logic cells were analyzed by the Monte Carlo simulation.
根据单电子系统半经典模型，采用蒙特卡罗法单电子模拟程序对电容耦合的类CMOS单电子逻辑单元在不同参数条件下的转移特性进行数值模拟。
应用推荐