It is considered that in the initial stage of film growth, the space reaction processes play an important role for the low-temperature crystallization of pc-Si film.
因此可以认为，在多晶硅薄膜生长的最初阶段，空间反应过程对低温晶化起重要作用。
Approaches to enlarging poly-Si film grain size are discussed, with emphasis on existing optics-based and lithography-based artificial controlled super lateral growth(AC-SLG) methods.
主要结合各种基于光 束调制和光刻技术的人工控制超级横向生长方法，讨论了获得大晶粒尺寸 优质多晶硅薄膜的途径。
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