The results show that the etching rate depends strongly on plasma composition and the RF bias voltage, but rather weakly on the gas flow rate.
结果表明刻蚀气体的组分和射频偏压对刻蚀速率有较大影响，而气体流量影响不大。
Influence of discharge parameters such as RF power and working pressure on the negative self-bias voltage of substrate was investigated by an oscilloscope with a high voltage probe.
采用高压探头示波器系统研究了射频辉光放电参数对自偏压的影响规律。
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