Therefore, plasma etching anisotropy can be improved by increasing rf frequency or rf-bias power.

因此，等离子体刻蚀的各向异性可以通过增加射频频率和射频功率来改善。

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The module design contains transmission line, bias and APC circuit of LD, low noise and high linearity RF circuit, FSK modern, monitor and control circuit design and PCB layout.

本文重点进行了光模块主要的电路包括传输线、LD偏置电路与APC电路、低噪声高线性射频电路、FSK调制与解调功能电路与监视控制功能电路的设计。

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Selfnegative bias on insulate substrate surface of rf glow discharge plasma reactors is studied theoretically. The mathematical analysis has been obtained by equivalent circuit method.

讨论了高频辉光放电等离子体系统中绝缘衬底表面的自负偏压问题，用等效电路方法给出了自负偏压的数学解析。

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