x-ray lithography mask x射线光刻掩模
The fabrication procedure of the mask and results of the deep X ray lithography are given.
给出了该掩模设计制作工艺过程及深x射线光刻结果。
In synchrotron radiation X-Ray lithography, distortion of mask is caused by its initial tension, stress and inhomogeneous thermal effect.
在同步辐射X射线光刻中，由于掩模的初始张应力和掩膜的非均匀受热将使掩模产生热畸变。
The fabrication of X-ray stencil silicon mask and its application in X-ray deep lithography are presented in this paper.
阐述了X射线镂空硅掩模的研制及其在同步辐射深层光刻中的应用。
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