...言GaAs/InGaP异质结构是制备许多高速器件和光电器件如异质结双极晶体管(HBT)、场效应管(FET)、量子阱激光器(quantum-well laser)和光电探测器(photodetector)的重要材料体系。腐蚀是直接影响着后续工艺和最终的器件特性的关键工艺之一。
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semiconductor quantum well laser diode 量子阱半导体激光管
SCH quantum well laser SCH量子阱激光器
InGaN quantum well laser InGaN量子阱激光器
quantum well laser diode 量子阱激光器
multi-quantum well laser 多量子阱激光器
multi-quantum-well laser 多量子阱激光器
single quantum well laser 单量子阱激光器
quantum well laser diodes 量子阱激光二极管
The results show that quantum-well laser with a lower threshold carrier density, higher optical output power, shorter photoelectric delay time, higher relaxation oscillation frequency.
结果显示量子阱激光器具有更低的阈值载流子密度,更高的光输出功率,光电延迟时间更短,驰豫振荡频率更高。
参考来源 - 半导体激光器的大信号调制特性研究·2,447,543篇论文数据，部分数据来源于NoteExpress
以上来源于: WordNet
Currently quantum well VCSEL (Vertical Cavity Surface Emitting Laser) is one of the most active research problems in the field of optoelectronics.
半导体垂直腔面发射量子阱激光器是当前光电子学领域最活跃的研究课题之一。
It is indicated that the laser structures with many quantum Wells will suffer from the inhomogeneity of the carrier density within the quantum well itself which affects the LD performance.
结果表明，当激光器包含多个量子阱时，量子阱内部的载流子密度的不均匀性会损害激光器的性能。
A simple equivalent circuit model of quantum well laser (QW LD) which is derived by QW rate equations and is accomplished in the circuit simulation program SPICE.
给出一个新的量子阱激光器等效电路模型，由量子阱激光器单模速率方程推导得到并在电路模拟程序SPICE中完成。
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