Scaling the programming voltage, while still maintaining 10 year data retention time, has been always a big challenge for Polysilicon Oxide Nitride Oxide Silicon (SONOS) researchers.
降低编程电压，同时仍保持十年的数据记忆时间，一直是多晶硅氮化硅氧化硅硅（SONOS）研究人员面临的一个巨大挑战。
FIG. 7 depicts an example set of threshold voltage distributions in a multi-state device with direct programming from the erased state to a programmed state.
图7描绘多状态装置中关于从经擦除状态到经编程状态的直接编程的阈值电压分布的示范性集合。
FIG. 8 depicts an example set of threshold voltage distributions in a multi-state device with two-pass programming from the erased state to a programmed state.
图8描绘多状态装置中关于从经擦除状态到经编程状态的双通过编程的阈值电压分布的示范性集合。
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