Then, we focused on the EMI problem from the power bus structure using both such EBG structures and the magnetic material coating on the power and ground planes.
然后，研究在各种EBG结构下，在电源和接地层内侧（即靠近介质层的一侧）增加高磁导率材料涂层对供电系阻抗特性的影响。
Three common power bus ESD protection structures in CMOS IC were discussed, the circuit structure and working theories were analyzed, an improved power bus ESD protection structure was put forward.
讨论了三种常见的CMOS集成电路电源总线esd保护结构，分析了其电路结构、工作原理和存在的问题，进而提出了一种改进的ESD保护电源总线拓扑结构。
We expect that the use of the some EBG structure can reduce the magnitude of the transfer impedances and the number of the resonance peaks, thus contribute to the EMI reduction of the power bus.
因此可以预期，某些EBG结构可以降低阻抗的幅度、减少谐振峰的个数，从而有效地减轻供电系的电磁干扰问题。
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