Diamond coatings were deposited on cemented carbide substrates with H2, CH4 and D4 as precursors by using microwave plasma chemical vapor deposition technique.
利用微波等离子体化学气相沉积方法，以H 2、CH4和八甲基环四硅氧烷(D4)为原料，在硬质合金基体上沉积了金刚石涂层。
Plasma enhanced chemical vapor deposition (PECVD) technique is the primary method which is used to prepare hydrogenated silicon film.
等离子体化学气相沉积技术制备氢化硅薄膜工艺条件成熟稳定而成为薄膜制备的首选方法。
Silicon nitride thin films were prepared onto steel substrates by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique.
采用射频等离子体增强化学气相沉积法(RF - PECVD)在钢衬底上沉积氮化硅薄膜。
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