High performance can be obtained for the integrated power electronics module (IPEM) by using a three-dimensional packaging structure instead of a planar structure.
采用三维封装结构取代传统的平面封装结构可获得高性能集成电力电子模块。
A method is described for fabricating and antifuse structure (100) integrated with a semiconductor device such as a FINFET or planar CMOS devise.
本发明提供了与如FINFET或平面CMOS器件的半导体器件集成的反熔断器结构(100)及其制造方法。
The key point of the fabrication of integrated optical devices is to prepare the planar waveguide structure with high quality.
在器件制作方面，最关键的是制作高品质的平面光波导。
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