Tetrahedral amorphous carbon (ta-C) films have been deposited on P-type (100) polished c-silicon wafer with different substrate negative bias by filtered cathodic vacuum arc technology.
采用过滤阴极真空电弧技术并施加一定的衬底负偏压，在P（100）单晶硅片上制备出四面体非晶碳薄膜。
Laser is used as active light source for the first time in photoeleotrochemioal image deposition on P-type silicon substrate, and pictures with clear structures are obtained.
本文首次用激光作激励光源，在P型硅片上成功地进行了光电化学成像沉积，得到层次清晰的图像。
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