Tetrahedral amorphous carbon (ta-C) films have been deposited on P-type (100) polished c-silicon wafer with different substrate negative bias by filtered cathodic vacuum arc technology.
采用过滤阴极真空电弧技术并施加一定的衬底负偏压，在P（100）单晶硅片上制备出四面体非晶碳薄膜。
Taking account of the disadvantage of current P-type impurity diffusion technology, an open tube gallium-aluminium diffusion technology is investigated.
就现行P型杂质扩散工艺的不足，进行了开旮铝镓掺杂技术的研究。
应用推荐