channel oxide 沟道区域氧化物
N-channel metal oxide semiconductor 通道金属氧化半导体
negative-channel metal oxide semiconductor 负通道金氧化物半导体
channel l oxide 沟道区域氧化物
channel metal oxide semiconductor 通道金属氧化半导体
channel metal oxide semiconductor P 通道金属氧化半导体
P-channel metal oxide semiconductor P沟道金属氧化物半导体
N-channel Metal Oxide Semiconductor N 沟道金属氧化物半导体
When the channel is activated, it increases the production of nitric oxide in the blood vessels that is believed to protect against inflammation and other vascular problems.
当这一通道被激活，就会增加血管中氧化一氮的含量，而氧化一氮被认为是能够抵御炎症和其他血液问题的重要成分。
The first important thin film from the thermal oxide group is the gate oxide layer under which a conducting channel can be formed between the source and the drain.
第一个重要的来自热氧化组薄膜是栅氧化层，在它之下，源和漏之间就能形成导电通道。
Thus, the relationships of oxide charge generation, including electron trapping and hole trapping effects, with different stress voltages and channel lengths are analyzed.
然后对不同应力电压、不同沟道长度下氧化层陷阱电荷（包括空穴和电子陷阱俘获）的产生做了进一步的分析。
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