A modified algorithm for evaluation of the threshold voltage in MOSFET with non-uniformly doped substrate is presented.
提出一种改进了的计算衬底非均匀掺杂mos器件开启电压的算法。
The unique features of DMOS such as quasi-saturation, non-uniformly doped channel, and temperature dependencies are accurately modeled.
该物理模型考虑了高压dmos器件的准饱和特性、沟道非均匀掺杂特性和温度效应。
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