A method of measuring positron lifetime is used to investigate temperature dependence of positron trapping at defects in neutron-irradiated silicon crystals.
用正电子湮没寿命测量方法研究了在中子辐照硅单晶缺陷中正电子捕获的温度效应。
Some important parameters of the silicon irradiated with high energy and thermal neutron are calculated respectively.
计算了热中子辐照和高能中子辐照单晶硅后的深能级密度、费米能级和其他有关重要参数。
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