... misfit energy 错配能 interfacial misfit strain 界面错配应变... lattice misfit 点阵错合,晶格错配...
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The critical thickness is determined from the zero formation energy of a misfit dislocation. i. e. the amount of reduced mismatch strain energy equaling the amount of creased dislocation self energy.
利用位错形成能等于零(即错配应变能的降低等于位错自能)的条件，得到了外延生长薄膜的临界厚度。
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