ferroelectric memory diode 铁电存储二极管
ferroelectric memory diode fmd 铁电存储二极管
tunnel diode circuit memory [计] 隧道二极管电路存储器
diode matrix memory 二极管矩阵存储管
tunnel diode memory [计] 隧道二极管存储器
diode-coupled memory cell 二极管耦合存储单元
light-emitting diode memory [计] 发光二极管存储器
diode-coupled bipolar memory cell 二极管耦合双极存储单元
diode-coupled memory 二极管耦合存储单元
A programmed region, i. e., a link, functioning as a diode, is formed on the anti-fuse after the anti-fuse OTP nonvolatile memory cell is programmed.
在编程此反熔丝一次可编程非易失存储器单元后，已编程的区域(例如为连结)可作为二极管，其形成于反熔丝上。
Such integrated circuit includes a memory cell with a diode and an antifuse in communication with the diode.
所述集成电路包括具有二极管及与所述二极管连通的反熔丝的存储器单元。
A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal and a diffusion barrier structure between the diode nodes.
具有栅极的二极管非易失性存储单元，其具有电荷储存结构，包括具有额外栅极端的二极管结构、与位于二极管节点之间的扩散阻挡结构。
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