The fundamental principles of the bulk-driven MOSFET, along with the frequency and noise characteristics, are discussed. The analysis and simulation of its low voltage characteristics are also made.
讨论分析了衬底驱动MOSFET的工作原理、频率特性和噪声特性，并对其低压特性进行了分析和仿真。
CMOS bandgap voltage reference with low voltage based on the bulk driven technology is designed in this paper, with circuit to improve PSRR and start-up circuit.
通过对低压低功耗集成电路设计技术的分析，着重设计了一个基于衬底驱动技术的CMOS带隙基准电压源，其带有提高电源抑制比电路和启动电路。
Based on the PMOS bulk-driven technique, an ultra-low voltage operational amplifier is proposed.
基于PMOS衬底驱动技术，设计实现了超低压运算放大器。
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