In the study of etching silicon, we showed the different etching rate by changing the discharge parameters and compared the etching rate between the several line widths.
在刻蚀硅材料的实验研究中，通过改变放电参数得到与刻蚀速度的关系，同时比较了不同宽度的图形之间的刻蚀结果。
A serial of technologies for oxide films growing, which is most fitful for the current etching and formation linkage line. The related mechanisms are also included.
研究了一系列与目前工业联动腐蚀、化成线具有良好兼容性的复合氧化膜生长技术，并对相关机制进行了详细研究。
Electrical pulse (EDM), line cutting, mold Etching.
电脉冲(电火花)，线切割，模具烂花。
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