gate insulator 栅极绝缘层 ; 栅绝缘层 ; 闸极绝缘层
insulator gate bipolar transistor 绝缘栅双极型功率晶体管
gate insulator traps 栅绝缘膜陷阱
double-layer gate insulator 复合栅绝缘层
surface energy of gate insulator 栅绝缘膜表面能
full self-alignment insulator-covered gate 全自对准介质盖栅工艺
In particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floating gate and the channel region.
特定来说，在非易失性存储器装置经历许多编程循环时，电荷变为俘获在浮动栅极与沟道区之间的绝缘体或电介质中。
The thickness of gate insulator can also influence the device performance.
研究了栅绝缘层的薄膜厚度对器件的电性能的影响。
On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.
与此同时，制备高质量的栅绝缘层用氮化 硅薄膜也是制备高性能薄膜晶体管（TFT）这一课题的需要。
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