v model improved 改进的v模型
A mathematical model of the I-V characteristics of single-electron transistors (SET's) is improved based on the orthodox single-electron theory.
基于正统单电子理论，提出了单电子晶体管的I - V特性数学算法改进模型。
The simulation results show that the improved model can predict the polarization behavior of ferroelectric layer, the C-V characteristic and memory window of MFIS capacitor more accurately.
模拟结果表明，改进模型能够更精确地预测MF IS电容器铁电层的极化行为、电容器的C - V特性及记忆窗口。
It is shown that the prediction precision of BP neural networks can be improved greatly according to many on-line data and the optimization model can be adapted to v...
通过大量在线数据分析，可知这种方法对中厚板板凸度的预报精度有很大改善，能适应不断变化的工艺过程和设备条件。
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