The hopping conduction in energy gap of amorphous semiconductors at low temperature is explained by calculating hopping probability when an electron hops from one defect center to the other.
通过计算电子由一种缺陷中心向另一种缺陷中心的跳跃几率，解释了非晶半导体中的低温带隙跳跃导电问题。
Moreover, the influences of the non-nearest neighbor hopping interactions and electron-phonon coupling on the distribution of the charge density and spin density are also discussed.
此外，对系统中的电荷密度和自旋密度分布受非最近邻电子跳跃相互作用和电-声耦合的影响情况亦进行了讨论。
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