The growth velocity of the crystal depends on the undercooling, temperature gradient and original particles in the precursor.
晶体生长速率取决于过冷度、温度梯度和初始粉末颗粒尺寸。
Using X-ray diffraction technique, the process of the crystal growth of metal ultrafine particles, which are prepared by sputtering method and deposited on the silica! Substrate, have been researched.
利用X -射线衍射技术对溅射沉积在非晶二氧化硅基底上的金属晶体超微粒的生长特性进行实验研究。
In the light of fractal theory and the theory of crystal nucleation and growth, we have discussed the effect of temperature ramp rate on the sizes of the formed silicon particles.
根据晶体生长理论，讨论了升温速率的高低与所形成的纳米硅颗粒大小的关系。
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