• 栅氧化工艺 - 引用次数：2

  In nitrogen-doped gate dielectric process development,an online monitor of oxide total charge method could help on developing and selecting an optimized gate oxide process condition to improve the CMOS device 1/f noise,shortening the process development cycle and cost.

  在进行CMOS掺氮栅氧化工艺开发时,可设计不同的掺氮工艺条件,通过在线监控氧化层总电荷的方法,选择较优的栅氧化工艺来降低器件的1/f噪声,缩短工艺开发周期和成本。

  参考来源 - 掺氮氧化硅栅介质对0.13um CMOS器件1/f噪声特性影响的研究

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