本文将CZ硅单晶片在Secco腐蚀液中择优腐蚀后，用光学显微镜和原子力显微镜对流动图形缺陷(flow pattern defects, FPDs)在硅片中的形态、分布及其端部的微观结构进行了仔细地观察和研究，并讨论了腐蚀时间对FPDs缺陷端部结构...
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After rapid thermal annealing(RTA) in Ar atmosphera at high temperature, the flow pattern defects(FPDs) density decreased more sharply in Sb-doped wafers than that in lightly B-doped wafers.
研究了掺杂剂原子种类及快速热处理技术对大直径直拉硅单晶中空洞型微缺陷密度的影响。
Influenced by the gas flow pattern and stress field near the dislocations, strip ribbons lied beside the V defects.
受位错附近应力场与气流的影响，V缺陷两侧出现带状高坡。
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