After rapid thermal annealing(RTA) in Ar atmosphera at high temperature, the flow pattern defects(FPDs) density decreased more sharply in Sb-doped wafers than that in lightly B-doped wafers.
研究了掺杂剂原子种类及快速热处理技术对大直径直拉硅单晶中空洞型微缺陷密度的影响。
Influenced by the gas flow pattern and stress field near the dislocations, strip ribbons lied beside the V defects.
受位错附近应力场与气流的影响，V缺陷两侧出现带状高坡。
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