The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time.

说明顶层的金属纳米晶作为一层额外的电荷俘获层可以通过直接隧穿机制进一步延长保留时间和提高平带电压漂移量。

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Moreover, we done the same experiment on the (110) orientation Si and discuss flat-band voltage shift of MOS capacitor under biaxial strain.

此外，我们也在(110)方向的矽基板上作了相同的实验，并且讨论其在双轴的伸展应力下金氧半电容的平带电压的移动情况。

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LDMOS is also widely used in the field of large area flat panel displays and automotive electronics as a high-voltage power amplifier devices.

而作为高压功率放大器件，在各种大面积平板显示屏和汽车电子领域也得到广泛应用。

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