fermi level 费密能级 ; 费米准位
Fermi level pinning 费米能级钉扎 ; 效应 ; 钉扎效应
intrinsic Fermi level 半导体的本质费米能阶 ; 本质费米能阶
surface Fermi Level 表面费米能阶
Pinning g of Fermi level 费米能级的钉扎
quasi fermi level 准费密能级
Fermi level diagram 费密能级 ; 费密能级图
pinning of fermi level 费米能级的钉扎
hole quasi fermi level 空穴准费米能级
At the same time, some calculations about the Fermi level and mobility edge could effectively explain some fine experimental results.
同时,通过对ITO薄膜材料光学禁带及费米能级迁移率边等的计算,可以解释ITO薄膜材料的电学性质以及有关光学性质的变化原因。
参考来源 - ITO薄膜红外低发射率机理研究When the Fermi level is near the valence band (inversion for P-channel MOSFET), the accept interface traps are neutral, and the donor interface traps are positively charged, leading to a negative threshold voltage shift contribution from the interface traps.
而对PMOSFET，当费米能级临近价带(P沟晶体管反型)时，施主型界面态陷阱带正电荷，受主型界面态陷阱为中性，界面态陷阱将引起负的阈值电压漂移。
参考来源 - 集成电路电离辐射效应数值模拟及X射线剂量增强效应的研究·2,447,543篇论文数据，部分数据来源于NoteExpress
以上来源于: WordNet
N the level in the distribution of electron energies in a solid at which a quantum state is equally likely to be occupied or empty 费米能级
The average positron lifetimes was explained by a proposed model, in which the shifting of Fermi-level affects the defect ionization and consequent positron trapping at defects site.
建立了一种用于解释正电子寿命谱测量结果的模型，该模型中费米能级位置的改变可影响缺陷的电离以及正电子在缺陷位置的被捕获。
The optical relaxation is a process in which nonequilibrium electrons, excited by laser pulses and originating from near Fermi level in Cu ultrafine particles, return to the equilibrium state.
该现象是由薄膜中金属超微粒子内费米能级附近电子被飞秒激光脉冲激发所产生的非平衡态电子经历瞬态弛豫造成的。
The Fermi level and conductivity have been recursively calculated under the electroneutrality condition, which are in fairly agreement with the experiment.
在电中性条件下，用迭代法求出费米能级与电导率，与实验结果吻合较好。
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