In the electron beam and ion beam device, the emission system affects the quality of the whole device.
在电子束及粒子束器件中，发射系统直接影响整个器件的质量。
Nodular defects, which are in critical state of damage, are cross-sectioned by focusing on the ion beam and by imaging using a field emission scanning electron microscope.
采用聚焦离子束和场发射扫描电镜对处于临界破坏状态的节瘤缺陷做剖面分析和观察。
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