Mechanism of dry etching damage and main causes for RIE induced - damage are investigated with RIE technique by utilizing PIN photodiodes.
采用rie法，利用PIN光电二极管，研究了干法腐蚀损伤机理及引起损伤的主要因素。
The plasma dry etching method is of evidently-reduced damage to the electrical performance of the allium nitride.
这样等离子体干法蚀刻对氮化镓的电气性能的损伤有显著降低。
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