This can be explained by two major differences of the 800v drain-source voltage waveform.

这里有两条理由可以解释800伏特漏源极电压波形的两个差异。

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The 800v quasi resonant design with lower current peak and lower drain-source voltage during turning on of the MOSFET demonstrates advantages in conducted EMI spectra regarding the primary side.

拥有更低峰值电流和场效应晶体管漏源极开通电压的800伏特准谐振设计展示出一次侧传导电磁干扰降低的优势。

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The superposition of all these elements results in a typical drain-source voltage shown in Fig. 16.

把这些原理按时序整合呈现出图16所示的典型漏源极电压。

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Whereas the channel is like a pipe between the source and the drain it simply lets electrons flow through when the transistor is on the island is more like a gap between two turnstiles.

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