direct gate current measurement
direct gate current measurement
直接栅极电流测量
以上为机器翻译结果，长、整句建议使用 人工翻译 。
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The growth laws of hot carrier damage of PMOSFET's during the hot carrier degradation and the high field annealing are studied by direct gate current measurement.
通过直接栅电流测量方法研究了热载流子退化和高栅压退火过程中PMOSFET ' s热载流子损伤的生长规律。
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